| 摘要 |
An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a buffer layer on a substrate; forming a polycrystalline-silicon active layer on the buffer layer, the said active layer having an island shape; forming a gate insulation layer on the buffer layer to cover the polycrystalline-silicon active layer; forming a first metal layer on the gate insulation layer; forming a second metal layer on the first metal layer; patterning the first and second metal layer to form a gate electrode, a gate line and a gate shorting bar; forming a source contact area and a drain contact area at both sides of the polycrystalline-silicon active layer; forming an interlayer insulator on the gate insulation layer to cover the patterned first and second metal layers; patterning the interlayer insulator and the gate insulation layer so as to form a first contact hole to the source contact area and the second contact hole to a drain contact area, patterning a portion of the interlayer insulator on the gate shorting bar so as to form an etching hole, eliminating a portion of the first layer of the gate insulation layer under the etching hole, and forming a bridge portion in the second layer of the gate insulation layer under the etching hole; forming a third metal layer on the gate insulation layer and on the bridge portion; patterning the third metal layer so as to form a source electrode and a drain electrode, and removing the bridge portion when patterning the third metal layer; and forming a passivation layer on the interlayer insulator and on the patterned third metal layer.
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