发明名称 Integrated circuits including insulating spacers that extend beneath a conductive line
摘要 Integrated circuit devices are fabricated by fabricating a conductive line on an insulating layer on an integrated circuit substrate. The conductive line includes a bottom adjacent the insulating layer, a top remote from the insulating layer and first and second sidewalls therebetween. An insulating spacer is formed to extend along the first and second sidewalls and to also extend along at least a portion of the bottom between the conductive line and the insulating layer. By providing an insulating spacer beneath at least a portion of the conductive line, insulation reliability may be improved even as the spacer may become narrower and/or the contact area may be enlarged.
申请公布号 US6930341(B2) 申请公布日期 2005.08.16
申请号 US20030631595 申请日期 2003.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK SUNG-JOON;KIM SEONG-GOO
分类号 H01L21/3205;H01L21/60;H01L21/768;H01L21/8242;H01L23/532;H01L27/108;(IPC1-7):H01L29/76 主分类号 H01L21/3205
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