发明名称 |
Simultaneous read-write memory cell at the bit level for a graphics display |
摘要 |
An improved memory for graphics displays includes an improved memory cell. Data may be written and read from the single bit cell simultaneously, eliminating the need for additional memory circuits to service an N column driver for a display. Additionally, the architecture of the memory allows for a signal input port for writing the data to the cell while allowing for multiple parallel output ports for reading the data. The unique architecture eliminates the need for addressing logic and refresh circuitry for display applications.
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申请公布号 |
US6930929(B1) |
申请公布日期 |
2005.08.16 |
申请号 |
US20020288553 |
申请日期 |
2002.11.04 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
ERHART RICHARD ALEXANDER;ALAM ARIF;LUDDEN CHRISTOPHER A.;MOORE BRUCE C.;CAMP DONALD |
分类号 |
G09G5/397;G11C7/10;G11C8/12;G11C8/16;G11C11/405;(IPC1-7):G11C8/12 |
主分类号 |
G09G5/397 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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