Hafnium nitride buffer layers for growth of GaN on silicon

摘要

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 <img id="CUSTOM-CHARACTER-00001" he="3.13mm" wi="2.79mm" file="US06929867-20050816-P00900.TIF" alt="custom character" img-content="character" img-format="tif"/>m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.