发明名称 |
Method and apparatus for improving temperature performance for GaAsSb/GaAs devices |
摘要 |
A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
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申请公布号 |
US6931044(B2) |
申请公布日期 |
2005.08.16 |
申请号 |
US20030368274 |
申请日期 |
2003.02.18 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
BOUR DAVID P.;TAN MICHAEL R. T.;CHANG YING-LAN |
分类号 |
H01S5/20;H01L33/06;H01S5/00;H01S5/183;H01S5/323;H01S5/34;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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