发明名称 Method for alloy-electroplating group IB metals with refractory metals for interconnections
摘要 An electroplated metal alloy including at least three elements. A multilayer interconnection structure that includes a substrate that is an interior of the interconnection structure, a conductive seed layer exterior to the substrate, and an electroplated metal alloy layer including at least three elements exterior to the conductive seed layer. A multilayer interconnection structure formed on a substrate, that includes a barrier layer, and a conductive seed layer, wherein the improvement includes an electroplated metal alloy layer including at least three elements. A method for forming a multilayer interconnection structure that includes providing a substrate, depositing a conductive seed layer, and electroplating a metal alloy layer including at least three elements exterior to the conductive seed layer.
申请公布号 US6930391(B2) 申请公布日期 2005.08.16
申请号 US20020228539 申请日期 2002.08.27
申请人 INTEL CORPORATION 发明人 KLOSTER GRANT M.;HEARNE SEAN J.
分类号 C25D3/56;C25D3/58;H01L21/285;H01L21/288;H01L21/44;H01L21/768;H01L23/48;(IPC1-7):H01L23/48 主分类号 C25D3/56
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