发明名称 |
Reading circuit, reference circuit, and semiconductor memory device |
摘要 |
A reading circuit, for reading data from one memory cell of a plurality of memory cells, includes a plurality of division sensing circuits each connected to the one memory cell via a sensing line corresponding thereto among a plurality of sensing lines; and a current-voltage conversion circuit for converting a current flowing through each sensing line into a sensing voltage representing a potential of the corresponding sensing line. Each division sensing circuit includes a current load circuit for supplying a current to the one memory cell via a corresponding sensing line, and a sense amplifier for sensing a potential difference between the corresponding sensing line and a corresponding reference line of a plurality of reference lines. The current load circuit included in at least one division sensing circuit has a current supply capability different from that of the current load circuit included in another division sensing circuits.
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申请公布号 |
US6930922(B2) |
申请公布日期 |
2005.08.16 |
申请号 |
US20030630568 |
申请日期 |
2003.07.29 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MORI YASUMICHI;YOSHIMOTO TAKAHIKO;ANZAI SHINSUKE;NOJIMA TAKESHI |
分类号 |
G11C16/06;G11C7/00;G11C11/56;G11C16/02;G11C16/04;G11C16/28;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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