发明名称 |
Calcium doped polysilicon gate electrodes |
摘要 |
A calcium doped polysilicon gate electrodes for PMOS containing semiconductor devices. The calcium doped PMOS gate electrodes reduce migration of the boron dopant out of the gate electrode, through the gate dielectric and into the substrate thereby reducing the boron penetration problem increasingly encountered with smaller device size regimes and their thinner gate dielectrics. Calcium doping of the gate electrode may be achieved by a variety of techniques. It is further believed that the calcium doping may improve the boron dopant activation in the gate electrode, thereby further improving performance.
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申请公布号 |
US6930362(B1) |
申请公布日期 |
2005.08.16 |
申请号 |
US20030698167 |
申请日期 |
2003.10.30 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
MIRABEDINI MOHAMMAD R.;SUN GRACE S.;ARONOWITZ SHELDON |
分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L29/49;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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