发明名称 |
Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence |
摘要 |
A method for fabricating low k and ultra-low k multilayer interconnect structures on a substrate includes: a set of interconnects separated laterally by air gaps; forming a support layer in the via level of a dual damascene structure that is only under the metal line; removing a sacrificial dielectric through a perforated bridge layer that connects the top surfaces of the interconnects laterally; performing multilevel extraction of a sacrificial layer; sealing the bridge in a controlled manner; and decreasing the effective dielectric constant of a membrane by perforating it using sub-optical lithography patterning techniques.
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申请公布号 |
US6930034(B2) |
申请公布日期 |
2005.08.16 |
申请号 |
US20020331038 |
申请日期 |
2002.12.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLBURN MATTHEW E.;HUANG ELBERT E.;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH;SAENGER KATHERINE L. |
分类号 |
H01L23/12;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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