发明名称 |
Etching a metal hard mask for an integrated circuit structure |
摘要 |
The invention is a method of etching an integrated circuit (IC) structure that includes a metal hard mask layer. The etching of the metal hard mask layer is performed by first feeding a gas mixture comprising a fluorine containing gas and oxygen (O<SUB>2</SUB>) gas to a reactor. The method then proceeds to generate a plasma that etches the metal hard mask layer. The method can be applied to either performing a via etch or a trench etch. Additionally, the invention teaches the removal of a photoresist layer without affecting the metal hard mask layer.
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申请公布号 |
US6930048(B1) |
申请公布日期 |
2005.08.16 |
申请号 |
US20020246844 |
申请日期 |
2002.09.18 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
LI SIYI;SADJADI S.M. REGA;KANG SEAN S.;LE TRI;YEN BI-MING;BRIGGS SCOTT |
分类号 |
H01L21/302;H01L21/3213;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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