| 摘要 |
The proposed unpackaged silicon microwave p-i-n diode contains a semiconductor plate with p+-ni-n+ or p+-pi-n+ structure with high resistance, which is made of single-crystalline silicon. At the surface of the plate, two highly doped layers with p+ and n+ conductivity, two symmetrical ohmic contacts that correspond to the said layers, a metallic base, a strip terminal, and a protective coating are formed. The design electric breakdown voltage of the diode is dependent on the thickness of the high-resistance ni or pi zone ( 500 m). The metallic base contains annular projections for a possibility to form a convex protective coating from organic-silicon material.
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