| 摘要 |
The proposed semiconductor microwave Gunn-effect diode based on gallium arsenide contains a metal-ceramic casing, connecting elements, a gold heat sink, and a diode element with mesa structure. The diode element is designed as a disk from gallium arsenide with n-n+-n++ structure, at which an anode ohmic contact and a multilayer cathode ohmic contact are formed. The anode ohmic contact is arranged on the side of the n++ zone, and the cathode ohmic contact is arranged on the side of the n zone and contains a layer of gold-germanium alloy, an antidiffusion layer of titanium diboride or zirconium diboride, and a gold layer.
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