| 摘要 |
<p>It is an object of the invention to provide a transistor that can maintain its high characteristics even after being subjected to a high temperature and high humidity environment, a circuit board, a display and electronic equipment that include the transistor. This object is solved by the thin film transistor of the present invention which comprises a source electrode 3, a drain electrode 4, an organic semiconductor layer 5 provided in contact with the source and drain electrodes 3 and 4, a gate insulating layer 6 provided in contact with the organic semiconductor layer 5, and a gate electrode 7 insulated from the source and drain electrodes 3 and 4 by the intermediary of the gate insulating layer 6. At least one of the gate electrode 7, the source electrode 3 and the drain electrode 4 is made up of a porous film composed mainly of an electrically conductive material.</p> |
