发明名称 INFRARED SOLID-STATE IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a thermal type infrared solid-state image sensor in which a dynamic range is hardly exceeded in a subsequent-stage circuit while suppressing an offset distribution and temperature drifts due to voltage drops in a drive wire. SOLUTION: The thermal type infrared solid-state image sensor comprises a two-dimensional arrangement of photo-sensitive pixels 1; reference pixels 12 constituted by excluding a heat-insulating structure and/or an infrared absorbing structure; signal lines 5 of which terminals are each connected to a first group of constant current means 2; a bias line 19 for connecting a second group of constant current means 20 in parallel provided for each row of pixel areas and causing the approximately same voltage drop as in the drive wire 3; and differential integrating circuits for integrating the differences between both end voltages of the first group of constant current means 2 and the second group of constant current means 20 for a prescribed time and outputting them. Reference pixel output signals outputted from the differential integrating circuits 7 are sampled and held by a sample holding circuit 13. The reference pixel output signals are compared with a reference voltage to generate bias voltages according to their differences and input them to the bias line 19. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005214639(A) 申请公布日期 2005.08.11
申请号 JP20040017977 申请日期 2004.01.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 UENO MASAFUMI
分类号 G01J1/02;G01J1/44;G01J5/02;G01J5/10;G01J5/12;G01J5/48;H01L27/14;H04N5/33;H04N5/335;H04N5/365;H04N5/376;(IPC1-7):G01J1/02 主分类号 G01J1/02
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