| 摘要 |
834,501. Transistors. WESTINGHOUSE ELECTRIC CORPORATION. Dec. 10, 1957 No. 38339/57. Class 37. An interleaving junction transistor comprises a first and second interleaving electrode means each consisting of a group of parallel sheet-like members in edge contact with one of the surfaces of a semi-conductor wafer, one of the groups contacting regions of conductivity type opposite to that of the wafer, and the electrode materials having a thermal conductivity similar to that of the semi-conductor. A third electrode is secured to the opposite surface of the wafer. Fig. 2 shows a PNP transistor in which a molybdenum or tungsten plate 12, coated with indium acts as the emitter electrode to a germanium or silicon wafer 10. The collector electrode 14 comprises a plurality of parallel molybdenum plates 18 the edges of which are coated with indium which, after a heating process, converts the semi-conductor region under each plate to opposite conductivity type. The base electrode 16 is of a similar nature to the collector, except that a coating of tin is used to provide an ohmic contact, and the collector and base electrode sheets are interleaved. In an alternative arrangement, the collector and base electrodes consist of concentric tubular elements. The collector and emitter may be interchanged. Fig. 3 shows the transistor in a sealed housing including a copper block 30, with radial fins 32 and sealed to the electrode plate 12. The housing is formed by steel portions 38 and 40 which are helium-shielded arc welded together and flexible copper braid leads 48 and 50 penetrate glass-metal seals 56 and are connected to electrodes 16 and 14. The housing may contain argon or nitrogen, and a cooling may be effected by means of a medium such as a hydrocarbon compound, and if desired by utilizing condensation and evaporation on the electrode plate surfaces. |
