METHOD FOR MANUFACTURING SEMICONDUCTOR THIN FILM AND IMAGE DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high quality and homogeneous semiconductor thin film for reducing the roughness of a film and crystal defect in a film to be generated in the process of crystallization. SOLUTION: This method for manufacturing a semiconductor thin film is provided to carry out laser irradiation of the arbitrary region of a semiconductor thin film formed on a substrate by scanning a laser beam or the substrate to form an almost band-shaped crystal crystallized so that crystal particles can be grown in the scanning direction. On X/Y coordinates where the value x of the beam diameter W(μm) of the laser beam measured in a direction which is almost the same as the scanning direction is defined as an X axis, and the value y of a scanning speed Vs(m/s) is defined as a Y axis, the crystallization processing is carried out in the region where the beam diameter W is larger than the wavelength of the laser beam (condition 1), the scanning speed Vs is smaller than the upper limit of the crystal growing speed (condition 2), and x×(1/y)<25μs are all satisfied (condition 3). COPYRIGHT: (C)2005,JPO&NCIPI