发明名称 |
MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same |
摘要 |
An MRAM memory cell has a layer system of circular-disk-shaped layers. The memory cell includes two magnetic layers separated by a nonmagnetic intermediate layer. The first magnetic layer or reference layer exhibits hard-magnetic behavior. The second magnetic layer or storage layer exhibits soft-magnetic behavior. Information is stored by the magnetization state of the storage layer. The storage layer has a weak intrinsic anisotropy that defines a magnetic preferred direction. The magnetization direction of the reference layer is parallel to the magnetization direction of a remnant magnetization in the interior of the storage layer. The remnant magnetization occurs as a result of applying an external magnetic field with a field component perpendicular to the preferred direction of the intrinsic anisotropy of the storage layer.
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申请公布号 |
US2005174838(A1) |
申请公布日期 |
2005.08.11 |
申请号 |
US20050051471 |
申请日期 |
2005.02.07 |
申请人 |
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发明人 |
RUEHRIG MANFRED;WECKER JOACHIM |
分类号 |
G11C11/02;G11C11/14;G11C11/34;G11C13/06;H01L27/22;(IPC1-7):G11C13/06 |
主分类号 |
G11C11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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