| 摘要 |
A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer, and a second insulating layer, which has been deposited on the entire insulating surface of the substrate except an area in which the first insulating layer is present.
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