| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dummy process suitable for chemo-mechanical polishing (CMP) and a polishing pad conditioning method. <P>SOLUTION: This CMP equipment comprises a polishing head 200, polishing base 220 and polishing pad 222. The polishing head 200 comprises a protective hood 202, base part 204, retainer ring 206, and wafer support assembly 208. Wafer 20 is attached to a mounting surface in wafer holding recess 209. The wafer support assembly 208 is relocated, and the bottom face of the retainer ring 206 is made to project from the bottom face of the wafer 20 so that the wafer 20 may not touch the front surface of the polishing pad 222. Due to this, the necessity to use many pieces of dummy wafer can be effectively avoided. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
