| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor thin film and a growing method of the same. <P>SOLUTION: Etching is partially performed on the substrate 100 to form a plurality of grooves 110, a leg section 120 that inhibits the vertical growth of the nitride semiconductor is formed inside these grooves, and if the nitride semiconductor thin film is grown so as to cover an upper section of the leg section 120 in a horizontal direction, the nitride semiconductor thin film of high quality can be grown. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
