发明名称 Implant having a photocatalytic unit
摘要 An implant comprises a photocatalytic layer on at least one surface. In some embodiments, the photocatalytic layer is a semiconductor oxide that is doped. According to some embodiments, the implant comprises a wave guide. According to some embodiments the implant comprises a light port. According to some embodiments, the implant comprises a reflective material on a surface of the waveguide. According to some embodiments the implant comprises a composite material comprising a first material that has a transmissivity when exposed to a predetermined wavelength of light and a second material that has photocatalytic activity when exposed to the predetermined wavelength of light. According to some embodiments the implant comprises a light source adapted to irradiate the photocatalytic surface.
申请公布号 US2005175658(A1) 申请公布日期 2005.08.11
申请号 US20040774105 申请日期 2004.02.06
申请人 DIMAURO THOMAS M.;SUTTON JEFFREY K.;ATTAWIA MOHAMED;SERHAN HASSAN;MALONE JOHN D.;BEARDSLEY TIM 发明人 DIMAURO THOMAS M.;SUTTON JEFFREY K.;ATTAWIA MOHAMED;SERHAN HASSAN;MALONE JOHN D.;BEARDSLEY TIM
分类号 A61B17/86;A61F2/00;A61F2/02;A61F2/30;A61F2/34;A61F2/36;A61F2/38;A61F2/44;A61L27/06;A61L27/42;A61L27/56;A61L31/02;A61L31/12;A61L31/14;A61M5/158;A61N1/30;B01J35/00;(IPC1-7):A61N1/30 主分类号 A61B17/86
代理机构 代理人
主权项
地址