发明名称 |
High-frequency integrated circuit device having high efficiency at the time of low power output |
摘要 |
An integrated circuit device includes a semiconductor amplification element and a bias circuit for applying a bias voltage to the semiconductor amplification element. A power source of the bias circuit is connected to a power source of the semiconductor amplification element via a semiconductor element such that idle current of the semiconductor amplification element is changed in response to a change of a supply voltage of the semiconductor amplification element.
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申请公布号 |
US2005174177(A1) |
申请公布日期 |
2005.08.11 |
申请号 |
US20030650661 |
申请日期 |
2003.08.29 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MORIWAKI TAKAO;OTSUKA HIROYUKI |
分类号 |
H03F1/30;H03F1/02;H03F3/24;H03F3/34;H03G3/00;(IPC1-7):H03G3/10 |
主分类号 |
H03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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