Semiconductor element comprises a matrix unit with gaps running in one direction, a doped source/drain region, and a storage layer

摘要

A semiconductor element comprises a matrix unit with gaps running in one direction (1), a doped source/drain region for one conductivity, and a second conductivity between the source/drain regions, a substrate, a storage layer and a gate electrode layer. A number of bit conductors (4) run parallel to the first direction. Storage cells formed by the source/drain regions, channel region and further source/drain regions run at an angle of 30-60 degrees to the longitudinal direction.