| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat treatment method for a group II-VI compound semiconductor substrate capable of realizing making the resistance of the substrate low without deteriorating the crystalinity, and to provide the group II-VI compound semiconductor substrate subjected to heat treatment. <P>SOLUTION: The heat treatment method of the group II-VI compound semiconductor substrate includes the steps of preparing a ZnSe substrate 10 having a front side 10a on which a semiconductor film serving as an active layer is formed, and a rear side 10b in contact with an aluminum film 9 and located opposite to the front side 10a; and applying heat treatment to the ZnSe substrate 10 in a processing chamber exposed in an atmosphere comprising Zn of a group II element configuring the ZnSe substrate 10. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
