RECESS GATE STRUCTURE HFET AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a recess gate structure HFET capable of greatly reducing access resistance to channels from source and drain electrode metals in a GaN HFET and to provide a method for manufacturing this recess gate structure HFET. SOLUTION: This HFET has a recess gate structure using nitride semiconductors. Semiconductor layers below the source and drain areas have a structure different from a channel layer structure comprising a barrier layer semiconductor 2 and a channel layer semiconductor 1 below a gate area, and this different structure is a laminated structure where semiconductor layers below the HFET source and drain areas in a single hetero structure are laminated in the same semiconductor material layer as that for the channel layer semiconductor 1 with a band gap smaller than that in the channel layer semiconductor 1. COPYRIGHT: (C)2005,JPO&NCIPI