Complementary metal oxide semiconductor image sensor has p-type heavily doped impurity ion region including boron or boron fluoride ions, formed at both sides of device isolation film which is formed along circumference of photodiode

摘要

The image sensor has photodiode formed in predetermined portion of an active region of a p-type semiconductor substrate (401). A p-type heavily doped impurity ion region (440) including boron or boron fluoride ions, is formed at both sides of device isolation film (406a) that is formed along the circumference of the photodiode. An independent claim is also included for the method of fabricating a complementary metal oxide semiconductor (CMOS) image sensor.