发明名称 |
TEMPERATURE-INSENSITIVE BIAS CIRCUIT FOR HIGH-POWER AMPLIFIERS |
摘要 |
An exemplary bias circuit is coupled to an amplifier. The bias circuit comprises a first bipolar transistor, a second bipolar transistor and a third bipolar transistor. The first bipolar transistor has a base connected to a first node, and the first node is connected to a reference voltage through a first resistor. The second bipolar transistor has a base connected to the first node. The third bipolar transistor has a collector connected to the first node and a base connected to an emitter of the first bipolar transistor at a second node. An emitter of the second bipolar transistor is connected to a base of a fourth bipolar transmitter associated with the amplifier, and the second bipolar transistor does not have a resistor connected to the emitter of the second bipolar transistor.
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申请公布号 |
WO2005017956(B1) |
申请公布日期 |
2005.08.11 |
申请号 |
WO2004US17664 |
申请日期 |
2004.06.04 |
申请人 |
SKYWORKS SOLUTIONS, INC.;YANG, YOUNGOO;CHOI, KEVIN;CHENG, NAI-CHUO |
发明人 |
YANG, YOUNGOO;CHOI, KEVIN;CHENG, NAI-CHUO |
分类号 |
H01L;H03F1/30;H03F3/04;(IPC1-7):H03F3/04 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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