| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming pattern using a chemically amplified resist by which formation of a surface insoluble layer is prevented without reducing thickness of a resist layer and the profile and dimensional accuracy of the resist pattern can be improved. <P>SOLUTION: The method includes: steps (210, 202) of forming a chemically amplified resist layer on a semiconductor substrate; a step (203) of exposing the chemically amplified resist layer along a pattern; a step (204) of heating the chemically amplified resist layer after the exposure process; a step (206) of forming a water-soluble polymer layer on the chemically amplified resist layer after the heat treatment; and a step (205) of developing the resist after the water-soluble polymer layer is formed. In particular, when the method is applied for forming a pattern in a chemically amplified resist having a fluorocarbon resin suitable for an F2 laser as the exposure light source, the method is effective to improve dimensional uniformity and to improve the resist profile. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
