| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method for a silicon wafer by which a defect of shallow recession (pit) or the like usually difficult to detect as well as a crystal defect such as COP, is detected at high sensitivity to enable the evaluation of the silicon wafer in a highly precise and reliable manner. SOLUTION: According to the evaluation method for the silicon wafer, an oxide film and an electrode are formed sequentially on the silicon wafer to form a MOS capacitor. An electric field is applied to the oxide film via the electrode to measure a dielectric breakdown characteristic of the oxide film. The evaluation method includes a pre-applying process of applying an electric field to the oxide film, and a dielectric breakdown characteristic measuring process of applying a certain current or a voltage to the oxide film of the MOS capacitor that has not broken down in the pre-applying process, prior to dielectric breakdown characteristic measuring process, to cause a secular dielectric breakdown in the oxide film and measure its dielectric breakdown characteristic. COPYRIGHT: (C)2005,JPO&NCIPI
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