POLYCRYSTALLINE SILICON LAYER HAVING NANOPARTICLE STRUCTURE AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a polycrystalline silicon having hyperfine particle sizes. SOLUTION: The method of forming a polycrystalline silicon having hyperfine particle sizes employs a differential heating of upper and lower surfaces of a substrate of a CVD apparatus, in which the lower surface of the substrate receives considerably more power than the upper surface, preferably more than 75% of the entire power; and in which the substrate is maintained during deposition at a temperature higher than 50°C above 550°C of crystallization temperature of silicon. COPYRIGHT: (C)2005,JPO&NCIPI