| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for wiring in a semiconductor element, which prevents a carbon-doped low-k dielectric film from deteriorating while an oxide capping layer is formed on the carbon-doped low-k dielectric film, and provide a wiring structure formed by the method. SOLUTION: The method for wiring in a semiconductor element comprises a step of forming an interlayer insulating film 104 on a semiconductor substrate. The interlayer insulating film 104 consists of a carbon-doped low-k dielectric film. An oxidation inhibitor film 106 is formed on the interlayer insulating film 104. An oxide capping layer 108 is formed on the oxidation inhibitor film 106. A via hole, which penetrates the oxide capping layer 108, the oxidation inhibitor film 106, and the interlayer insulating film 104, is formed. A conductive film pattern 116' is formed in the via hole. COPYRIGHT: (C)2005,JPO&NCIPI
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