发明名称 |
Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substrates |
摘要 |
A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.
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申请公布号 |
US2005176604(A1) |
申请公布日期 |
2005.08.11 |
申请号 |
US20040021040 |
申请日期 |
2004.12.23 |
申请人 |
LEE KWANG-WOOK;HWANG IN-SEAK;KO YONG-SUN;YOON BYOUNG-MOON;KIM KYUNG-HYUN;KIM KY-SUB;SONG SUN-YOUNG;LEE HYUK-JIN;KIM BYUNG-MOOK |
发明人 |
LEE KWANG-WOOK;HWANG IN-SEAK;KO YONG-SUN;YOON BYOUNG-MOON;KIM KYUNG-HYUN;KIM KY-SUB;SONG SUN-YOUNG;LEE HYUK-JIN;KIM BYUNG-MOOK |
分类号 |
C11D1/722;C09K13/04;C09K13/08;C11D1/00;C11D3/02;C11D3/04;C11D3/20;C11D3/30;C11D3/36;C11D3/39;C11D11/00;C11D17/08;C23G5/036;H01L21/02;H01L21/28;H01L21/30;H01L21/302;H01L21/304;H01L21/321;H01L21/3213;H01L21/82;H01L21/8239;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):C11D1/00 |
主分类号 |
C11D1/722 |
代理机构 |
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代理人 |
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地址 |
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