Memory circuit for data storage esp. for mobile/cell phone, has control circuit for blocking and enabling read/write functions in first and second state

摘要

A memory circuit (3) has a memory cells matrix (4), a control circuit (8) which is set into a first state with switch-on of the supply voltage to the memory circuit (3) and into a second state following initialization of the memory cells matrix (4). The control circuit (8), in the first state, blocks write and/or read of the memory cells matrix (4) and, in the second state, enables write and read of the memory cells matrix (4). An independent claim IS included for a method for driving a memory/storage circuit.