发明名称 METAL OXIDE SEMICONDUCTOR INCLUDING ZINC AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To expand functional wavelength demensions in the ultraviolet region to the long wavelength side (e.g. the visible light region) in addition to the ultraviolet region with reference to a photocatalyst, solar cell, photodetector or light emitting device that uses a metal oxide semiconductor having an optical absorption band in the ultraviolet region, which includes a ZnO<SB>4</SB>tetrahedron where four oxygens are coordinated in bivalent Zn in its crystal structure. <P>SOLUTION: One or two coordinated oxygen elements of the ZnO<SB>4</SB>tetrahedron existing on the front surface or the inside of the metal oxide semiconductor having the optical absorption band in the ultraviolet region, which includes the ZnO<SB>4</SB>tetrahedron where four oxygens are coordinated in bivalent Zn in its crystal structure. By doing this, the functional wavelength demensions in the ultraviolet region to the long wavelength side (e.g. the visible light region) of the photocatalyst, solar cell, photo detector or light emitting device is expanded due to the reduction made in the band gap of the metal oxide semiconductor having the optical absorption band in the ultraviolet region, which includes the ZnO<SB>4</SB>tetrahedron where four oxygens are coordinated in bivalent Zn in its crystal structure. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005217385(A) 申请公布日期 2005.08.11
申请号 JP20040056848 申请日期 2004.01.31
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 OSHIKIRI MITSUTAKE
分类号 C01B13/02;B01J23/06;B01J35/02;C01B3/04;C01G9/02;C01G19/00;C01G23/00;H01L21/363;H01L31/04;H01L31/10;H01M8/06 主分类号 C01B13/02
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