| 发明名称 |
FET CHANNEL HAVING A STRAINED LATTICE STRUCTURE ALONG MULTIPLE SURFACES |
| 摘要 |
A channel (16) of a FinFET (10) has a channel core (24) and a channel envelope (32), each made from a semiconductor material defining a different lattice structure to exploit strained silicon properties. A gate is coupled to the channel envelope through a gate dielectric. Exemplary materials are Si and SixGe1-x, wherein 78<x<92. The channel core (24) has a top surface (26) of width wc and an upstanding surface (28, 30) of height hc, preferably oriented 90° to one another. The channel envelope (32) is in contact with the top (26) and upstanding surfaces (28, 30), so that the area of interface is increased as compared to contact only along the top surface (26), improving electrical conductivity and gate (18) control over the channel (16). The height hc can be tailored to enable a smaller scale FET (10) within a stabilized SRAM. Various methods of making the channel (16) are disclosed, including a mask and etch method, a handle wafer/carrier wafer method, and a shallow trench method. Embodiments and methods for FinFETs with one to four gates are disclosed. |
| 申请公布号 |
WO2005010944(A3) |
申请公布日期 |
2005.08.11 |
| 申请号 |
WO2004US23183 |
申请日期 |
2004.07.19 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;JOSHI, RAJIV V.;WILLIAMS, RICHARD Q. |
发明人 |
JOSHI, RAJIV V.;WILLIAMS, RICHARD Q. |
| 分类号 |
H01L;H01L21/336;H01L21/8244;H01L21/84;H01L27/01;H01L27/11;H01L27/12;H01L29/06;H01L29/786;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L |
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