发明名称 Verfahren zur Herstellung eines Transfermasken-Substrats, Transfermasken-Substrat und Transfermaske
摘要 To reduce a stress change generated in the production processes of a transfer mask to improve a position accuracy of a mask pattern. A production method of a transfer mask characterized by further including, in the production processes of the transfer mask, a step of forming on said thin film layer a stress control layer that cancels a stress change of the thin film layer generated in the production processes of the mask, prior to formation of said resist layer, and a step of carrying out etching using said resist pattern as an etching mask.
申请公布号 DE10392658(T5) 申请公布日期 2005.08.11
申请号 DE2003192658T 申请日期 2003.11.05
申请人 HOYA CORP., TOKIO/TOKYO 发明人 AMEMIYA, ISAO
分类号 G03F1/16;B81C99/00;G03C5/00;G03F1/14;G03F1/20;G03F9/00;H01L21/027;(IPC1-7):G03F1/16;B81C5/00 主分类号 G03F1/16
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