| 摘要 |
PROBLEM TO BE SOLVED: To provide an array substrate of array structure which assures close contact with substrate and low resistance value and results in higher dispersion preventing effect of Cu in the simplified etching process. SOLUTION: The array substrate comprises a substrate, a close contact layer consisting of a metal or a metal nitride film formed on the substrate, a tapered copper wiring formed on the close contact layer, and a dispersion preventing layer consisting of a metal or a metal nitride film laminated covering the upper part and the side part of the tapered copper wire. The dispersion preventing layer and close contact layer prevent dispersion of copper in the copper wire. The metal or metal nitride film is formed of Mo, MoN, and TiN. COPYRIGHT: (C)2005,JPO&NCIPI |
