| 摘要 |
PROBLEM TO BE SOLVED: To evaluate variations of solubility of a resist existing among extremely fine regions in the resist. SOLUTION: A measurement region of a resist applied to a substrate is irradiated with energy which exposes the resist, and the film thickness of the measurement region is measured while exposing and developing the resist in developer for develop. When the film thickness of the resist becomes a desired thickness, development is stopped and the variations of development speed of the resist is evaluated by measuring roughness of the surface of the measurement region. In energy irradiation, a region which is different from the measurement region is irradiated with energy by an energy amount which increases the solution speed, and a sample region is formed. In film thickness measurement, the measurement region and the sample region are developed simultaneously, and change of light intensity from the resist in the sample region is calculated. The film thickness of the measurement region can be measured based on the calculation result. COPYRIGHT: (C)2005,JPO&NCIPI |
