VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE, MANUFACTURE THEREOF, AND POWER CONVERSION DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a voltage controlled semiconductor device of high breakdown voltage, low on-resistance, and low noise. SOLUTION: The semiconductor device is comprised of a surface voltage control gate semiconductor region and an embedded voltage control gate semiconductor region having a current pass near the center, in an upper and lower part of a thin active region. The voltage control gate semiconductor region is comprised of an active region and a semiconductor region with reverse polarity to a source region. The source region is configured at both ends of the thin active region in the embedded voltage control gate semiconductor region, so that the surface and the bottom are located at a lower position respectively then the surface voltage control gate semiconductor region, and the edge parts have the same potential. COPYRIGHT: (C)2005,JPO&NCIPI