| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can grow a crystal into a desired length dimension and form a crystalline region having a desired crystal growth direction in a desired region in a single step of growing the crystal, and to provide a method for manufacturing the semiconductor device. SOLUTION: A high heat conduction film 22 and a low heat conduction film 23 are formed on a glass substrate 21 in different regions. The thermal conductivity of the low conduction film 23 is lower than the thermal conductivity of the high heat conduction film 22. A semiconductor film 24 is formed to cover the high and low heat conduction films 22 and 23, and then crystallized. Consequently, a region having a desired crystal length dimension can be formed in a first region. Similarly, by making a second region small, a crystal region having a desired crystal length dimension can be formed in a residual region other than the first and second regions on the semiconductor film 24. Thus, the semiconductor film 24 can be efficiently used. COPYRIGHT: (C)2005,JPO&NCIPI
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