| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a uniformity when a semiconductor substrate is processed, for example, a uniformity of a thin-film forming rate or a thin-film etching rate in the plane of the semiconductor substrate is required to be accurately controlled in a process of manufacturing a semiconductor device, and this necessity is more strictly demanded as the diameter of the substrate is made larger. SOLUTION: Since a cathode electrode 25 having the semiconductor substrate mounted thereon is covered with a mesh-net-like anode electrode 27, a plasma 30 generated between the electrodes can be trapped in a space between the electrodes and a large quantity of processing gas can be made to flow. For this reason, the semiconductor substrate 26 can be uniformly processing in its plane. COPYRIGHT: (C)2005,JPO&NCIPI
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