| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively manufacture a double-sided wiring tape carrier for a semiconductor device which is high in conduction reliability at a blind via hole for forming a fine and highly dense wiring pattern with a much fewer number of processes than a conventional manner. SOLUTION: An insulating film 12 whose one face is formed with an adhesive layer 11 is formed with a via hole 13 by metallic press or the like, and a copper foil 14 is adhered to an adhesive layer side, copper plating 15 is filled in the via hole 15, a conducted processing layer 16 electrically conducted to the filled copper plating part is formed on the surface of an insulating film at the opposite side of the adhesive layer, and a copper plating layer 17 is formed on the conducted processing layer. Consequently, tape carrier materials 18 can be manufactured in a state that copper layer 14 and the copper plating layer 17 are formed on the both sides of the insulating film, and that the copper layers of the both faces are electrically conducted through the via hole, and the copper layers on the both faces are formed into a wring pattern 19 by a photo-etching method. COPYRIGHT: (C)2005,JPO&NCIPI
|
