| 摘要 |
PROBLEM TO BE SOLVED: To reduce threshold current of semiconductor laser equipment and to improve light emitting efficiency by suppressing accumulation of electrons and holes in a semiconductor layer sandwiched with double hetero-junctions with high carrier concentration. SOLUTION: An optical waveguide laminate structure 10 has the primary first clad layer 12 of a p-InP layer, the double hetero-junction layer 14 of p-AlGaInAs, the secondary first clad layer 16 of the p-InP layer, the first optical confinement layer 18 of p-InGaAsP, the active layer 20 of the quantum well structure of InGaAsP, the second optical confinement layer 22 of n-InGaAsP and the second clad layer 24 formed of n-InP layer. The interface of the primary first clad layer 12 and the double hetero-junction layer 14 and the interface of the double hetero-junction layer 14 and the secondary first clad layer 16 are constituted to become second type hetero-junction. COPYRIGHT: (C)2005,JPO&NCIPI
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