| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a DMOS structure on an SOI substrate, capable of realizing a low turn-on resistance. SOLUTION: The semiconductor device comprises an n-type silicon active layer 3 and a silicon substrate 1 formed as isolated from each other by a silicon oxide film 2, a p-type well layer 4 and a high-concentration n-type drain layer 5 selectively formed by diffusion on the n-type silicon active layer 3, a gate oxide film 8 formed on the surface of the n-type silicon active layer 3, a gate electrode 9 formed on the gate oxide film 8, a high-concentration p-type body layer 6 and a high-concentration n-type source layer 7 selectively formed by diffusion on the surface of the p-type well layer 4, a drain electrode 10 formed on the n-type drain layer 5, a source electrode 11 formed on the n-type source layer 7, and a body electrode 12 formed on the p-type body layer 6. A controlling circuit 13 is provided for controlling the bias to be applied across the source electrode 11 and the body electrode 12 in response to the bias applied to the gate electrode 9. COPYRIGHT: (C)2005,JPO&NCIPI
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