| 摘要 |
PROBLEM TO BE SOLVED: To make the manufacturing method of a semiconductor device to be suitable when a thin silicon wafer is used and to apply it for manufacturing a power semiconductor device. SOLUTION: A first silicon substrate 101 and a Pt film 106 are Schottky-joined. The Pt film 106 and a second silicon substrate 102 are Ohmic-joined. A Cr film 105, an Ni film 104 and an Ag film 103 are laminated and formed on the other main face of the second silicon substrate 102. The films in a range from the Pt film 106 to the Ag film 103 have functions as electrodes. The first silicon substrate 101 has thickness sufficient for preventing occurrence of a break and a crack when the wafer becoming the first silicon substrate 101 is diced. Thus, it is a reinforcing board of the first silicon substrate 101 and has a function as a part of the electrodes. COPYRIGHT: (C)2005,JPO&NCIPI
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