| 摘要 |
A method of operating a ferroelectric-type nonvolatile semiconductor memory comprising a memory unit having a bit line, a transistor for selection, a sub-memory unit composed of memory cells that are M in number, plate lines that are M in number, and a sense amplifier connected to the bit line; wherein each memory cell comprises a first electrode, a ferroelectric layer and a second electrode; the first electrodes of the memory cells constituting the sub-memory unit are in common with the sub-memory unit; said common first electrode is connected to the bit line through the transistor for selection; and each second electrode is connected to each plate line; said method comprising reading out data stored in the memory cell at a designated address externally designated, latching said data in the sense amplifier, and then outputting said data latched in the sense amplifier.
|
