发明名称 Semiconductor memory element and its lifetime operation starting device
摘要 A memory ( 1 ) is provided with: an address control portion ( 10 ); a protection film ( 11 ); a property deterioration material layer ( 12 ); data storage areas ( 14, 15, 16, 17 ); and bonding pads ( 18 ). The protection film ( 11 ) protects an organic semiconductor layer constituting a semiconductor circuit and prevents intrusion of moisture or chemical molecules in the air, light, or the like, into the organic semiconductor layer. Deterioration of the organic semiconductor layer is started by breaking the protection film ( 11 ) and using a specified means, thus starting operation of the lifetime period. Furthermore, the property deterioration material layer ( 12 ) contains a material for deteriorating the property of the organic semiconductor and deterioration of the organic semiconductor layer is started by diffusing the material into the organic semiconductor layer.
申请公布号 US2005173699(A1) 申请公布日期 2005.08.11
申请号 US20050516336 申请日期 2005.04.13
申请人 KURODA KAZUO;YANAGISAWA SHUUICHI 发明人 KURODA KAZUO;YANAGISAWA SHUUICHI
分类号 G06F12/14;G06K19/077;G06K19/10;G11C5/00;G11C29/50;H01L27/10;H01L27/28;H01L51/05;(IPC1-7):H01L29/08;H01L35/24;H01L51/00 主分类号 G06F12/14
代理机构 代理人
主权项
地址