Cell arrays of memory devices having extended source strapping regions

摘要

A cell array of a flash memory device includes extended source strapping regions. The cell array includes a device isolation layer and active regions. The device isolation layer is formed in a semiconductor substrate, and the active regions are defined by the device isolation layer. Word lines cross over the active regions, and a common source line electrically connects the active regions between two word lines of word line pairs. A source strapping region is defined between the two word lines of the word line pairs. The source strapping region crosses multiple active regions.