| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a coating liquid for forming a porous film which can form a thin film of thickness controlled easily and arbitrarily by a method used for a regular semiconductor process and which has excellent mechanical strength and dielectric characteristics. <P>SOLUTION: A method of manufacturing the coating liquid for forming the porous film includes a step of manufacturing polysiloxane particulate, silica particulate or zeolite particulate (A component), a step of giving crosslinkability to these A components, and a step of stopping the crosslinkability temporarily. The composition for forming the porous film which is obtained by this method, is provided. Moreover, the method of manufacturing the porous film includes a step of manufacturing the A components, a step of giving the crosslinkability to these A components, a step of adding a crosslinkability suppression material which stops the crosslinkability temporarily to obtain the composition for forming the porous film, a step of applying the composition for the porous film on the substrate to form a film, a step of drying the film, and a step of heating the dried film, removing the crosslinkability suppression material thermally, and crosslinking the particulate. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
