| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be downsized while maintaining a high breakdown voltage. SOLUTION: An intermediate potential electrode 20 formed to surround an IGBT cell is provided between field plates 14 and 15 on a field oxide film 13 at the outer circumferential part of an IGBT chip. An intermediate potential application means locally formed to part of the region on the chip outer circumferential part gives a prescribed level, which is a level between the level of an emitter electrode 10 and the level of a channel stopper electrode 12 to the intermediate potential electrode 20. COPYRIGHT: (C)2005,JPO&NCIPI |
